technologies
Precursors for Atomic Layer Deposition
Inventor: Dr. Sean Barry and Jason Coyle
Institution: Carleton University (via PARTEQ Innovations)
The invention is a novel monomeric copper (I) metal deposition precursor for use in atomic layer deposition (ALD). Copper deposition by ALD has been studied intensely with a wide variety of precursors. With respect to precursor characteristics, there are two general flaws: thermal stability and vapour pressure. This new monomeric copper (I) compound has excellent volatility and remarkable thermal stability and has been demonstrated to form a monolayer. It shows promise for use in ALD.
